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| FDMS7656AS N-Channel PowerTrench(R) SyncFETTM September 2009 FDMS7656AS N-Channel PowerTrench(R) SyncFETTM 30 V, 49 A, 1.8 m Features Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant General Description The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom Pin 1 S D S S G 5 6 7 8 4G 3 2 1 D D S S S D D D D D MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed dv/dt EAS PD TJ, TSTG MOSFET dv/dt Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 49 194 31 180 1.3 242 96 2.5 -55 to +150 V/ns mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.3 50 C/W Package Marking and Ordering Information Device Marking FDMS7656AS Device FDMS7656AS Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com (c)2009 Fairchild Semiconductor Corporation FDMS7656AS Rev.C FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 1 mA, VGS = 0 V ID = 10 mA, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 19 500 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 C VGS = 10 V, ID = 30 A rDS(on) Static Drain to Source On Resistance VGS = 7 V, ID = 27 A VGS = 4.5 V, ID = 25 A VGS = 10 V, ID = 30 A, TJ = 125 C gFS Forward Transconductance VDS = 5 V, ID = 30 A 1.2 1.6 -5 1.3 1.5 1.6 1.8 161 1.8 1.9 2.0 2.5 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 6545 2465 210 0.5 8705 3280 315 1.1 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 30 A VDD = 15 V, ID = 30 A, VGS = 10 V, RGEN = 6 22 12 50 7 95 43 18.2 9.1 35 21 80 13 133 60 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2 A VGS = 0 V, IS = 30 A (Note 2) (Note 2) 0.37 0.74 50 84 0.7 1.2 81 136 V ns nC IF = 30 A, di/dt = 300 A/s Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 242 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7656AS Rev.C 2 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted 180 150 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V VGS = 3 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 5 VGS = 3 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 120 90 60 30 0 0.0 4 3 VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 1 VGS = 4.5 V VGS = 4 V VGS = 10 V 0 0 30 60 90 120 150 180 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 SOURCE ON-RESISTANCE (m) ID = 30 A VGS = 10 V 1.4 1.3 ID = 30 A PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 TJ = 125 oC 2 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 180 150 ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 200 100 10 1 0.1 0.01 TJ = 25 oC TJ = -55 oC VDS = 5 V TJ = 125 oC IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 0 V 120 90 TJ = 25 oC TJ = 125 oC 60 TJ = -55 oC 30 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7656AS Rev.C 3 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 30 A 10000 Ciss VDD = 10 V VDD = 20 V CAPACITANCE (pF) 8 6 VDD = 15 V Coss 1000 4 2 f = 1 MHz VGS = 0 V Crss 0 0 20 40 60 80 100 Qg, GATE CHARGE (nC) 100 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 150 VGS = 10 V TJ = 25 oC 10 TJ = 100 oC 100 VGS = 4.5 V TJ = 125 oC 50 Limited by Package RJC = 1.3 C/W o 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) VGS = 10 V 1 ms 10 10 ms 100 1 THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 s DC 10 SINGLE PULSE RJA = 125 oC/W 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TC = 25 oC 1 0.5 -3 10 TC = 25 oC 0.01 0.01 0.1 1 10 100 200 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS7656AS Rev.C 4 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0.001 -3 10 10 -2 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7656AS Rev.C 5 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7656AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 30 30 25 di/dt = 300 A/s IDSS, REVERSE LEAKAGE CURRENT (A) 10 -2 TJ = 125 oC -3 CURRENT (A) 20 15 10 5 0 -5 0 50 100 TIME (ns) 10 TJ = 100 oC 10 -4 TJ = 25 oC 150 200 250 10 -5 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7656AS SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses leakage versus drain-source voltage FDMS7656AS Rev.C 6 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM Dimensional Outline and Pad Layout FDMS7656AS Rev.C 7 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM FPSTM PowerTrench(R) The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) Build it NowTM FRFET(R) Programmable Active DroopTM SM (R) Global Power Resource CorePLUSTM QFET TinyBoostTM Green FPSTM QSTM CorePOWERTM TinyBuckTM Green FPSTM e-SeriesTM Quiet SeriesTM CROSSVOLTTM TinyCalcTM GmaxTM RapidConfigureTM CTLTM TinyLogic(R) GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TM TinyPowerTM ISOPLANARTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM MegaBuckTM EZSWITCHTM* SmartMaxTM TinyWireTM TM* MICROCOUPLERTM SMART STARTTM TriFault DetectTM MicroFETTM SPM(R) TRUECURRENTTM* MicroPakTM STEALTHTM (R) MillerDriveTM SuperFETTM Fairchild(R) MotionMaxTM SuperSOTTM-3 Fairchild Semiconductor(R) Motion-SPMTM SuperSOTTM-6 UHC(R) (R) FACT Quiet SeriesTM Ultra FRFETTM OPTOLOGIC SuperSOTTM-8 FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) FAST(R) VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM FlashWriter(R) * Power-SPMTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMS7656AS Rev.C 8 www.fairchildsemi.com |
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